200v-600v 1.5a byg20d thru BYG20J web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics glass passivated junction low reverse current soft recovery characteristics fast reverse recovery time good switching characteristics wave and reflow solderable fast silicon mesa smd rectifier absolute maximum ratings parameter test conditions type symbol value unit reverse voltage byg20d v r =v rrm 200 v g =repetitive peak reverse voltage byg20g v r =v rrm 400 v BYG20J v r =v rrm 600 v peak forward surge current t p =10ms, half sinewave i fsm 30 a average forward current i fav 1.5 a junction and storage temperature range t j =t stg 55...+150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r =1a, t j =25 c e r 20 mj maximum thermal resistance parameter test conditions symbol value unit junction lead t l =const. r thjl 25 k/w junction ambient mounted on epoxyglass hard tissue r thja 150 k/w mounted on epoxyglass hard tissue, 50mm 2 35 m cu r thja 125 k/w mounted on aloxidceramic (al 2 o 3 ), 50mm 2 35 m cu r thja 100 k/w electrical characteristics parameter test conditions type symbol min typ max unit forward voltage i f =1a v f 1.3 v g i f =1.5a v f 1.4 v reverse current v r =v rrm i r 1 a v r =v rrm , t j =100 c i r 10 a reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 75 ns
ratings and characteristic curves byg20d thru BYG20J figure 5. thermal response e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 0 40 80 120 160 0.01 0.1 1 10 100 i reverse current ( a ) r t j junction temperature ( c ) 200 94 9341 v r =v rrm figure 1. typ. reverse current vs. junction temperature 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 94 9340 40 80 120 160 200 125k/w r thja =25k/w 100k/w 150k/w figure 2. max. average forward current vs. ambient temperature 01 2 3 4 0.01 0.1 1 10 100 i forward current ( a ) f v f forward voltage ( v ) 94 9342 t j =25 c t j =75 c t j = 125 c figure 3. max. forward current vs. forward voltage 0 0.2 0.4 0.6 0.8 0 100 200 300 400 600 t reverse recovery time ( ns ) rr i f forward current ( a ) 1.0 94 9343 500 25 c 75 c 100 c t amb = 125 c 50 c i r =0.5a, i r =0.125a figure 4. max. reverse recovery time vs. forward current 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9339 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse 125k/w dc 200v-600v 1.5a byg20d thru BYG20J fast silicon mesa smd rectifier
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